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Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics - ScienceDirect
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Energies | Free Full-Text | 4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance
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Mitsubishi Electric Develops Trench-type SiC-MOSFET with Unique Electric-field-limiting Structure | 2019 | Global News | MITSUBISHI ELECTRIC UNITED STATES
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Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage - ScienceDirect
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Schematic view of the planar and trench MOSFET cross-sections with the... | Download Scientific Diagram
100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance
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